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Freescale Semiconductor Technical Data
Document Number: MRF18085B Rev. 6, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. * GSM and GSM EDGE Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain - 12.5 dB (Typ) @ 85 Watts CW Efficiency - 50% (Typ) @ 85 Watts CW * Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 85 Watts CW Output Power Features * Internally Matched for Ease of Use * High Gain, High Efficiency, and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF18085BLR3 MRF18085BLSR3
1930- 1990 MHz, 85 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRF18085BLR3
CASE 465A - 06, STYLE 1 NI - 780S MRF18085BLSR3
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 273 1.56 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (1) 0.79 Unit C/W
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF18085BLR3 MRF18085BLSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 600 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture, 50 ohm system) Common- Source Amplifier Power Gain @ 85 W (VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz) Drain Efficiency @ 85 W (VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz) Input Return Loss @ 85 W (VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz) P1 dB Output Power (VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz) 1. Part is internally matched both on input and output. Gps IRL P1dB 11.5 46 -- 80 12.5 50 - 12 90 -- -- -9 -- dB % dB W Crss -- 3.6 -- pF VGS(th) VGS(Q) VDS(on) 2 2.5 -- -- 3.9 0.18 4 4.5 0.21 Vdc Vdc Vdc V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 10 1 Vdc Adc Adc Symbol Min Typ Max Unit
MRF18085BLR3 MRF18085BLSR3 2 RF Device Data Freescale Semiconductor
VSUPPLY VBIAS + C2 R1 R2 C8 C1 R3 RF INPUT Z1 C4 C9 C5 Z2 Z3 DUT Z4 Z5 Z6 C6 Z7 RF OUTPUT C3 C10 C7 + C11
C1, C10 C2 C3, C6 C4 C5 C7, C8 C9 C11 R1, R2 R3
1.0 nF Chip Capacitors, ATC 10 mF, 35 V Tantalum Capacitor 10 pF Chip Capacitors, ATC 3.3 pF Chip Capacitor, ATC 4.7 pF Chip Capacitor, ATC 100 nF Chip Capacitors, ACCU - P (1206) 3.9 pF Chip Capacitor, ATC 470 mF, 63 V Electrolytic Capacitor 1.0 kW Chip Resistors (0805) 2 x 18 kW Chip Resistor (1206)
Z1 Z2 Z3 Z4 Z5 Z6 Z7 PCB
1.654 x 0.082 Microstrip 0.207 x 0.082 Microstrip 0.362 x 1.260 Microstrip 0.583 x 0.669 Microstrip 0.449 x 0.179 Microstrip 0.877 x 0.082 Microstrip 0.326 x 0.082 Microstrip 0.030 Glass Teflon(R) (er = 2.55)
Figure 1. 1930 - 1990 MHz Test Fixture Schematic
C2 VBIAS R1 R2 C8 C1 R3
C11 C3 C10 C7 VSUPPLY
A1
C6 C4 C9 C5
A2
MRF18085B Rev 0 Ground
Ground
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. 1930 - 1990 MHz Test Fixture Component Layout
MRF18085BLR3 MRF18085BLSR3 RF Device Data Freescale Semiconductor 3
VBIAS
+ C13 C1 C12 R1 R2 C2 R5 + C10 C11 T2 C3 C4 C14 R7 C5 R6 RF INPUT Z1 C9 Z2 C7 Z3 Z6 Z4 Z5 C8 Z7 Z8 Z9 RF OUTPUT B1 VSUPPLY
R3
R4
B1 C1, C2 C3, C4 C5 C7 C8 C9 C10 C11, C12 C13 C14
MRF18085BLR3 MRF18085BLSR3 4 RF Device Data Freescale Semiconductor
III III III
T1
Short RF Ferrite Bead, #27 430119447 1 mF Chip Capacitors, ACCU - P (0805) 1 nF Chip Capacitors, ACCU - P (0805) 10 pF Chip Capacitor, ACCU - P (0805) 1.5 pF Chip Capacitor, ACCU - P (0805) 8.2 pF Chip Capacitor, ACCU - P (0805) 1.0 pF Chip Capacitor, ACCU - P (0805) 100 mF, 63 V Electrolytic Capacitor 10 nF Chip Capacitors (0805) 10 mF, 35 V Tantalum Capacitor 8.2 pF Chip Capacitor, ACCU - P (0805)
R1 R2 R3 R4 R5 R6, R7 T1 T2 Z1 - Z9 Substrate
10 Chip Resistor (0805) 1 k Chip Resistor (0805) 1.2 k Chip Resistor (0805) 2.2 k Chip Resistor (0805) 5 k Chip Resistor (0805) 9 Chip Resistors (1206) (18 x 18 ) Voltage Regulator, Micro - 8, #LP2951 NPN Bipolar Transistor, SOT - 23, #BC847 Printed Transmission Lines 0.5 mm Rogers 4350 (er = 3.53)
Figure 3. 1930 - 1990 MHz GSM EDGE Optimized Demo Board Schematic
VBIAS
Ground
VSUPPLY
R1 C1 R2 R3 R4 C2 T2 R5 T1 C3
D
C13 C14
C10
+
C12 B1 C5 C4 C11
R6
C7 C9
C8
MRF18085
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 4. 1930 - 1990 MHz GSM EDGE Optimized Demo Board Component Layout
MRF18085BLR3 MRF18085BLSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS (Performed on a GSM EDGE Optimized Demo Board)
14 EVM, ERROR VECTOR MAGNITUDE (%) IDQ = 1000 mA 13 800 mA 600 mA 12 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 1.91 19 W Avg. 28 W Avg. VDD = 26 Vdc IDQ = 800 mA Pout = 38 W Avg.
G ps, POWER GAIN (dB)
400 mA
11 VDD = 26 Vdc f = 1960 MHz 10 1 10 Pout, OUTPUT POWER (WATTS) 100
1.92
1.93
1.94 1.95 1.96 1.97 f, FREQUENCY (GHz)
1.98
1.99
2.0
Figure 5. Power Gain versus Output Power
Figure 6. Error Vector Magnitude versus Frequency
14 13.5 G ps, POWER GAIN (dB) 13 32 V 28 V 24 V VDD = 20 V EVM, ERROR VECTOR MAGNITUDE (%)
6 5 4 3 2 1 0 0 20 60 80 40 Pout, OUTPUT POWER (WATTS) 100 34 36 40 42 44 46 38 Pout, OUTPUT POWER (dBm) AVG. 48 50 EVM
14 13 12 11 10 9 8 G ps , POWER GAIN (dB) , DRAIN EFFICIENCY (%)
Gps
12.5 12 11.5 11
10.5 10 9.5 9
Figure 7. Power Gain versus Output Power
Figure 8. EVM and Gain versus Output Power
14 13.5 G ps, POWER GAIN (dB) 13
-5 -10 -15 -20 -25 VDD = 26 Vdc IDQ = 800 mA 2.00 -30 -35 2.05 G ps, POWER GAIN (dB)
16 15 14 Gps 13 12 11 10 1 10 Pout, OUTPUT POWER (WATTS) h VDD = 26 Vdc IDQ = 800 mA f = 1960 MHz
60 50 40 30 20 10 0 100
30 W
12.5 80 W 12
30 W
11.5 80 W 11 1.85 1.90 1.95 f, FREQUENCY (GHz)
Figure 9. Power Gain and IRL versus Frequency
Figure 10. Power Gain and Efficiency versus Output Power
MRF18085BLR3 MRF18085BLSR3 6 RF Device Data Freescale Semiconductor
GSM TEST SIGNAL
-10 -20 -30 -40 -50 (dB) -60 -70 -80 -90 -100 -110 Center 1.96 GHz 200 kHz Span 2 MHz 400 kHz 600 kHz 400 kHz 600 kHz Reference Power VBW = 30 kHz Sweep Time = 70 ms RBW = 30 kHz
Figure 11. EDGE Spectrum
MRF18085BLR3 MRF18085BLSR3 RF Device Data Freescale Semiconductor 7
Zo = 5
f = 1990 MHz
Zload
f = 1805 MHz f = 1805 MHz f = 1990 MHz Zsource
VDD = 26 V, IDQ = 800 mA, Pout = 85 W CW f MHz 1805 1880 1930 1990 Zsource 1.43 - j3.74 1.27 - j3.95 1.5 - j4.13 1.86 - j4.76 Zload 2 - j3.60 1.98 - j3.57 2.13 - j3.16 2.17 - j3.36
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance MRF18085BLR3 MRF18085BLSR3 8 RF Device Data Freescale Semiconductor
NOTES
MRF18085BLR3 MRF18085BLSR3 RF Device Data Freescale Semiconductor 9
NOTES
MRF18085BLR3 MRF18085BLSR3 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
3 (FLANGE)
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
CASE 465 - 06 ISSUE G NI - 780 MRF18085BLR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
4X U (FLANGE)
B
1
4X Z (LID)
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
(FLANGE)
B
2
2X
K
D bbb
M
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A
(FLANGE)
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
A
CASE 465A - 06 ISSUE H NI - 780S MRF18085BLSR3
MRF18085BLR3 MRF18085BLSR3 RF Device Data Freescale Semiconductor 11
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MRF18085BLR3 MRF18085BLSR3
Rev. 12 6, 5/2006 Document Number: MRF18085B
RF Device Data Freescale Semiconductor

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